Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction

摘要

In this paper we systematically analyze the electronic structures of polarand nonpolar wurtzite-InN/GaN quantum dots and their modification due to thequantum-confined Stark effect caused by intrinsic fields. This is achieved bycombining continuum elasticity theory with an empirical tight binding model todescribe the elastic and single-particle electronic properties in these nitridesystems. Based on these results, a many-body treatment is used to determineoptical absorption spectra. The efficiency of optical transitions depends onthe interplay between the Coulomb interaction and the quantum-confined Starkeffect. We introduce an effective confinement potential which represents theelectronic structure under the influence of the intrinsic polarization fieldsand calculate the needed strength of Coulomb interaction to diminish theseparation of electrons and holes.